ИСТИНА

Organic light-emitting transistors (OLETs) are emerging organic electronic devices which combine electrical switching ability of organic field-effect transistors and light-generation capability of organic LEDs. While it was reported that the OLET quantum efficiency may exceed that of organic LEDs [R. Capelli, et al. Nat. Mater. 9, 496 (2010)], the power conversion efficiency (PCE) of OLETs is still significantly lower compared to organic LEDs. This is particularly due to the lack of understanding of the OLET device physics, especially the main energy loss channels. In this work, we present a one-dimensional drift-diffusion numerical model of OLET and study the OLET performance for various parameters and properties of active layer and electrode materials. We have found that the OLET PCE is the most sensitive to the work functions of source and drain electrodes, while the most of geometrical and material parameters of the OLET channel give a far less pronounced effect on the OLET performance. We analyze the energy losses due to low carrier mobility, insufficient selectivity and high contact resistance of the electrodes, energetic disorder, and non-radiative recombination. Approaches for minimizing these losses are discussed. Our findings can help to improve the OLET performance. This work was supported by Russian Science Foundation (grant 15-12-30031).