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Интеллектуальная Система Тематического Исследования НАукометрических данных |
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Optical Properties of Undoped and Er-doped Structures of Amorphous Si Nanoclusters in Silicon Dioxide Matrixдоклад на конференции
- Авторы: Zhigunov D.M., Shalygina O.A., Maslova N.E., Timoshenko V.Yu, Zacharias M., Seminogov V.N., Sokolov V.I., Glebov V.N., Panchenko V.Ya, Kashkarov P.K.
- Международная Конференция (Семинар (workshop)) : SEDWAL Workshop 2008 (Sensitized Er doped waveguide amplifier/laser)
- Даты проведения конференции: 2008
- Тип доклада: Стендовый
- Докладчик: Zhigunov D.M.
- Место проведения: Levico Terme – Trento, Italy, Italy
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Аннотация доклада:
Recent investigations show that amorphous silicon nanoclusters can act as efficient sensitizers of Er3+ ions photoluminescence (PL), providing even better PL yield at 1.54 μm as compared with well known sensitizers – Si nanocrystals. In present work undoped and erbium-doped (dose from 1014 to 7•1015 cm-2) structures with amorphous Si nanoclusters in SiO2 matrix were investigated by the photoluminescence spectroscopy method. It was found that erbium PL is characterized by the lifetime up to 5-6 ms at RT, possesses a good temperature stability, while linear dependence of PL intensity on Er dose indicates that cooperative processes are inefficient at doses below 1015 cm-2.
- Добавил в систему: Жигунов Денис Михайлович