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Интеллектуальная Система Тематического Исследования НАукометрических данных |
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Chalcogenide semiconductor Ge2Sb2Te5 (GST225) is characterized a large difference between optical or electrical properties of the amorphous and crystalline states. Usually, rapid and reversible phase switching there may be achieved under optical pumping or resistive heating, which allows for designing phase change memory devices. Herein, we discuss our experiments on multi-pulse femtosecond laser irradiation, which lead to laser-induced periodic surfaces structures (LIPSS) fabrication, as well as direct and reversible phase transitions in GST225 thin films on crystalline silicon substrates with silicon oxide.