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Интеллектуальная Система Тематического Исследования НАукометрических данных |
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The epitaxial films of the Ce-doped Gd3(AlxGa1-x)5O12 is a new luminescence materialдоклад на конференции
- Авторы: Vasil’eva N.V., Spassky D.A., Randoshkin I.V., Dudin A.A., Plotnichenko V.G., Khakhalin A.V., Eganova E.M., Sokolov V.O.
- Международная Конференция : International Conference “Functional materials” ICFM-2013
- Даты проведения конференции: 2013
- Тип доклада: не указан
- Докладчик: не указан
- Место проведения: Crimea, Ukraine, Ukraine
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Аннотация доклада:
we report on the growth, the optical and luminescence characterization of Ce3+ – doped Gd3(AlxGa1-x)5O12 epitaxy films with x=0.00, 0.22, 0.31, 0.38 formula units (f.u.). The films were grown with the isothermal liquid-phase epitaxy method on the (111) -oriented Gd3Ga5O12 substrates. In the spectral dependence of normalized optical density these films were found the absorption bands Pb2+ and Ce3+ ions. Ce3+ - related luminescence has been observed with the partial substitution of Ga with Al ions. The effect is connected with the shift of 5d Ce levels to the bandgap. Experimental evidence of the bandgap increase with the introduction of Al3+ ions into gadolinium gallium garnet is presented as well.
- Добавил в систему: Васильева Наталья Владимировна