ИСТИНА

Different approaches are under elaboration aimed at the cost reduction of solar electricity. In crystalline silicon photovoltaics (PV), the most important of them are: (i) continuous increasing the solar cell efficiency in mass production; (ii) replacement of the p-type silicon as base material by n-type silicon; (iii) concentration PV approach; (iv) using bifacial cells as an alternative to conventional monofacial cells. The purpose of this work was to combine all these approaches in one solar cell, i.e. to develop a high-efficiency, bifacial n-type silicon solar cell for application in low-concentrator system. Developed solar cell is based on the Laminated Grid Cell (LGCell) Indium-Tin-Oxide (ITO)/(p+nn+)Cz-Si/Indium-Fluorine-Oxide (IFO) structure, made of routine Cz n-type silicon. Homogeneous boron doped emitter and phosphorus doped BSF with the sheet resistances of ~95 /sq and ~50 /sq, correspondingly, were obtained by diffusion and etch-back. ITO and IFO layers were deposited by ultrasonic spray pyrolysis. Gridlines of wire were attached by low-temperature lamination process. The front/rear efficiencies of above 17.2%/15.25% under 2-5X illumination were achieved. This result is unique because, to our knowledge, no results concerning the development of a bifacial concentrator n-type silicon solar cell have been reported until now.