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Интеллектуальная Система Тематического Исследования НАукометрических данных |
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On a way to fabrication tachnology of ultra thin Si on sapphire доклад на конференции
- Авторы: Шемухин А.А., Балакшин Ю.В., Черныш В.С.
- Международная Конференция : The International Conference “Micro- and nanoelectronics"
- Даты проведения конференции: 2012
- Тип доклада: не указан
- Докладчик: не указан
- Место проведения: Липки
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Аннотация доклада:
A serious problem appeared under realisation of silicon on sapphire (SOS) technology. It was found that a strongly defect layer with a thickness about 100 nm was formed at silicon–sapphire interface due to lattice unconformity between the crystal lattice of Al2O3 and the Si crystal lattice. To overcome this problem a process called as solid phase epitaxial regrowth (SPER) was suggested. The obtained results are discussed in the report. The carried-out researches allowed to make a conclusion on mechanisms SPER and to define implantation conditions at which significant improvement of crystal structure of the silicon film is observed.
- Добавил в систему: Шемухин Андрей Александрович