ИСТИНА

Here we present the study of the modification of structural properties and energy transfer to emission centers caused by partial substitution of Al and Ga cations by Sc in GAGG:Ce crystals. Unit cell parameters and space group were obtained using the XRD analysis. The chemical compositions of the crystals were determined using SEM-EDX and TEM-EDX techniques. Structures were refined by Rietveld method and the distribution of Al/Ga/Sc cations between octahedral and tetrahedral sites was obtained. The influence of Sc on the electronic band structure and the energy of the 4f and 5d Ce3+ levels is shown. The modification of the band structure induced by the Sc electronic states results in the suppression of Gd emission and enhancement of Ce3+ emission at low temperatures.