ИСТИНА

Highly conductive protection carbon coating was grown on (100) n-Si substrate by filtered C60 ion beam irradiation. Ion energy was kept at 5 and 8 keV, sub-strate temperature was varied in the range 100 – 400 °C. Irradiation with 5 keV beam results in growth of carbon films at all temperatures used. Films are amor-phous with high amount of sp3-bonded carbon atoms. Graphite nanocrystals of ~1.5 nm in size were found in the coatings grown at 400 °C. 8 keV beam sputters the target at 100 and 200 °C, while bombardment at higher temperatures (300 and 400 °C) results in carbon film growth. Graphite nano-crystal formation is much less pronounced at this energy. Silicon carbide interlayer is formed at the substrate-coating interface due to ion-beam mixing in all cases, which results in good adhesion of the coating. Sheet resistance of a coating is about 150 Ohm/sq and is slightly higher for the samples grown at 8 keV. Overall, we report chemically inert highly condictive hard coating that can be utilysed in a wide range of electronic and MEMS applications.