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Интеллектуальная Система Тематического Исследования НАукометрических данных |
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Ar/BCl3 ICP etching of MJ SC photosensitive A3B5 based layers through front contact mask was investigated at different BCl3 and Ar flow rates, different biases and temperatures at constant ICP power (1250 W) and pressure (2 mTorr). Integral etch rate of A3B5 based layers ranges from 0.02 to 0.36 µm/min. Temperature has a weak effect on the etching rate in the range of 30…60*C. Highest etch rates observed at pure BCl3 mode and increase with bias and bias power.
№ | Имя | Описание | Имя файла | Размер | Добавлен |
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1. | Abstracts of reports. 11th International Conference New Electrical and Electronic Technologies and their Industrial Implementation (NEET 2019) | abstracts_of_reports.pdf | 213,8 КБ | 31 января 2020 [PavlovUS] | |
2. | Презентация | NEET_2019_Lagov.pdf | 1003,0 КБ | 11 октября 2019 [lagov2000] |