ИСТИНА |
Войти в систему Регистрация |
|
Интеллектуальная Система Тематического Исследования НАукометрических данных |
||
The study of plasma processing of low-k dielectrics involves several fields of research. The detailed understanding of mechanisms of elementary pro-cesses that occur under the irradiation by low-energy (50–200 eV) ions is required for optimization of the patterning technology. The dielectric con-stant of modern low-k films is closely related to their porosity and pore sizes, so analyzing how the intensity of physical sputtering and the ma-terial structure depend on these parameters may reveal potential mecha-nisms of changes in the chemical and physical properties of SiOCH films.