ИСТИНА

Layers of silicon nanowires (SiNWs) formed by metal-assisted chemical etching of low boron doped monocrystalline silicon (c-Si) substrates were investigated by means of the optical spectroscopy of reflection/absorption in visible and near-infrared regions. The total reflection of SiNW layers with thickness above 1 m was significantly lower than that of с-Si wafer for the spectral region above the band gap of c-Si, while it was comparable or even higher than the c-Si reflection in the near-infrared range below the band gap. An approximation of the diffusive propagation of light was found to be applicable to explain the near-infrared spectra of SiNWs.