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Интеллектуальная Система Тематического Исследования НАукометрических данных |
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New STM/STS observation method has been used for investigation of interacting nonequilibrium impurity states on semiconductor surface. The dependence of electronic density spatial distribution on applied tunneling voltage is analyzed. Energy values of "switching on and off" of interatomic interactions are determined. The dependence of Cr impurity dangling bond hybrid orbital electron spatial localization on tunneling bias is observed.