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Интеллектуальная Система Тематического Исследования НАукометрических данных |
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The fundamental 1∕f noise in monolayer grapheneстатья
- Автор: Kazakov Kirill A.
- Журнал: International Journal of Modern Physics B
- Год издания: 2023
- Издательство: World Scientific Publishing Co
- Местоположение издательства: Singapore
- DOI: 10.1142/s0217979224501388
- Аннотация: A lower bound on the voltage noise power spectrum set by quantum indeterminacy exists in any conducting material. This bound is calculated explicitly for monolayer graphene taking into account graphene pseudospin/valley band structure. It is found to be of the form characteristic of the observed 1∕fγ noise. It is shown that the deviation of γ from unity is a result of the piezoelectric interaction of charge carriers with acoustic phonons. A comparison with the measured 1∕f noise in graphene and graphene-based heterostructures shows that the observed noise intensity is near the quantum bound. It is demonstrated that the recently observed sharp peak in γ at small gate voltages in the field-effect transistors based on graphene/boron nitride heterostructure is well reproduced by the theory, and is to be attributed to the out-of-plane piezoelectric activity in this heterostructure. A simple kinetic model is proposed to describe the effect of the charge carrier trapping on γ.
- Добавил в систему: Казаков Кирилл Александрович