Аннотация:A novel electron-deformation-thermal instability (EDTI) induced by short intense laser pulses on the surface of a semiconductor is considered. The appearance of the EDTI is due to the modulation of the width of the forbidden band by deformation, the generation of nonequilibrium electron-hole pairs, and heating of the surface layer. Depending on the geometry of the laser beam and on the symmetry of the surface, the development of EDTI leads to the formation of coupled surface deformation fields, and the concentration of the electron-hole pairs and temperature in the form of one-dimensional gratings, concentric rings, and radial rays