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The nature and distribution of radiation-induced defects in silicon along the range of protons and alpha particlesстатья
Информация о цитировании статьи получена из
Scopus,
Web of Science
Дата последнего поиска статьи во внешних источниках: 19 октября 2013 г.
- Авторы: Bulgakov Yu V., Kolomenskaya T.I., Kuznetsov N.V., Shulga V.I., Zaritskaya V.A.
- Журнал: Radiation effects
- Том: 54
- Номер: 3-4
- Год издания: 1981
- Издательство: Gordon and Breach.
- Местоположение издательства: New York, United States
- Первая страница: 129
- Последняя страница: 134
- DOI: 10.1080/00337578108210039
- Аннотация: The variation in the resistivity of the n-type silicon along the range of protons and alpha-particles with an energy of 6.3 MeV/nucleon has been studied experimentally over a wide interval of irradiation doses. The initial rate of removal of majority carriers as a function of the distance from the surface of the sample has been determined. The spatial distribution of radiation-induced defects, resulting from elastic collisions between the incident particles and the silicon atoms and the subsequent cascade multiplication, has been calculated by a computer simulation technique. The nature of radiation-induced defects in silicon, which are stable at room temperature, has been examined on the basis of the data obtained, in various segments of the range of heavy charged particles. Both the points defects, containing impurity atoms of oxygen or phosphorus, and the defects proper, which contain no impurity atoms, have been shown to form in the cases under consideration. The relation of electrically active defects to the calculated number of defects has been found to increase near the end of the particle range.
- Добавил в систему: Шульга Владимир Иванович