Аннотация:We study Magnetic Josephson Junctions (MJJs) – superconductor-insulator-superconductor-ferromagnet-superconductor (SIS’FS) device for a scalable high-density cryogenic memory compatible with energy-efficient single flux quantum (SFQ) circuits. We fabricate Nb-Al/AlOx-Nb-PdFe–Nb junctions with properties of resultant SIS’FS devices significantly affected by ferromagnetic (F) and intermediate superconducting (S’) layers. We investigate properties of SIS’FS MJJs for memory applications and their dependence from the MJJ shape and size, thickness of intermediate S’-layer, and microstructural properties of PdFe layer. By applying magnetic field pulses, we switch between memory cell states with high and low MJJ critical current, logical “0” and “1,” that are different in voltage by ~ 2 mV. In order to change the MMJ magnetization, or perform Write operation, the MJJ device is integrated with magnetically coupled control line. A comparison of SIS’FS re-magnetization switching properties is made between applying of a current pulse to different shapes of MJJs through the integrated control lines and an external magnetic field pulse. We also discuss the scalability of the MJJ based random access memories.
