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Интеллектуальная Система Тематического Исследования НАукометрических данных |
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Effect of crystal structure on the Young's modulus of GaP nanowiresстатья
- Авторы: Alekseev Prokhor A., Borodin Bogdan R., Geydt Pavel, Khayrudinov Vladislav, Bespalova Kristina, Kirilenko Demid, Reznik Rodion, Nashchekin Alexey, Haggren Tuomas, Lähderanta Erkki, Cirlin George, Lipsanen Harri, Dunaevskiy Mikhail S.
- Журнал: Nanotechnology
- Год издания: 2021
- Издательство: IOP Publishing
- Местоположение издательства: [Bristol, UK], England
- DOI: 10.1088/1361-6528/ac0ac7
- Аннотация: Young’s modulus of tapered mixed composition (zinc-blende with a high density of twins and wurtzite with a high density of stacking faults) Gallium Phosphide (GaP) nanowires (NWs) was investigated by atomic force microscopy (AFM). Experimental measurements were performed by obtaining bending profiles of as-grown inclined GaP NWs deformed by applying a constant force to a series of NW surface locations at various distances from the NW/substrate interface. Numerical modeling of experimental data on bending profiles was done by applying Euler-Bernoulli beam theory. Measurements of the nano-local stiffness at different distances from the NW/substrate interface revealed NWs with a non-ideal mechanical fixation at the NW/substrate interface. Analysis of the NWs with ideally fixed base resulted in experimentally measured Young’s modulus of 155±20 GPa for ZB NWs, and 157±20 GPa for WZ NWs, respectively, which are in consistence with a theoretically predicted bulk value of 167 GPa. Thus, impacts of the crystal structure (WZ/ZB) and crystal defects on Young’s modulus of GaP NWs were found to be negligible.
- Добавил в систему: Гейдт Павел Викторович