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Дата последнего поиска статьи во внешних источниках: 27 мая 2015 г.
Аннотация:Free charge carriers in mesoporous Si (meso-PS) consisting of Si nanocrystals of small dimensions of about 6–10 nm are investigated by the infrared-absorption technique. Adsorption of acceptor molecules or filling the pores with dielectric liquids are found to increase the concentration of free holes (p) in meso-PS up to the half of the doping level of the heavily boron-doped p+-Si substrate (p∼5×1018 cm-3) from which the meso-PS was made. Considering the value of p and the dc electrical conductivity σ, the hole mobility is determined as about 5×10-4 and 5×10-3 cm2 V-1 s-1 for as-prepared meso-PS and meso-PS filled with a polar dielectric liquid, respectively. The activation energy is larger for σ than for p giving evidence for thermal activation of the hole mobility. A model of the dielectric confinement for charge carriers and hydrogenic impurities is applied to explain the dependence of σ and p on the dielectric constant of the ambience of the Si nanocrystals.