Title: Enhanced photoluminescence in grooved silicon microstructures Author(sстатья
Статья опубликована в высокорейтинговом журнале
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:Grooved silicon structures formed by anisotropic
chemical etching of crystalline silicon (c-Si) wafers in alkaline
solution and composed by c-Si walls and voids
(grooves) with thicknesses of several micrometers were
found to exhibit efficient photoluminescence after excitation
with laser radiation at 1.06 μm. The photoluminescence
emission which originates from the interband radiative recombination
of charge carriers in c-Si walls was represented
by a broad spectral band centered at 1.1 eV. Independently
on the polarization direction of the excitation light, the photoluminescence
of grooved silicon structures was partially
linear-polarized with the polarization degree of 0.15–0.24
along c-Si walls and the photoluminescence intensity was
strongly enhanced in comparison with that of c-Si substrate.
These experimental observations are explained by considering
an enhancement of the photoluminescence excitation
due to both partial light localization in c-Si walls and a low
rate of the non-radiative recombination at surface defects on
c-Si walls. The defect density could be modified by additional
chemical treatment or thermal annealing, which resulted
in significant changes of the photoluminescence intensity
of the grooved Si structures. The obtained results are
discussed in view of possible applications of grooved Si in
optoelectronics and molecular sensorics.