Effect of Thallium Doping on the Mobility of Electrons in Bi2Se3 and Holes in Sb2Te3статья
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Дата последнего поиска статьи во внешних источниках: 26 августа 2016 г.
Аннотация:The Shubnikov–de Haas effect and the Hall effect in n-Bi2 – xTlxSe3 (x = 0, 0.01, 0.02, 0.04) and
p-Sb2 – xTlxTe3 (x = 0, 0.005, 0.015, 0.05) single crystals are studied. The carrier mobilities and their changes
upon Tl doping are calculated by the Fourier spectra of oscillations. It is found shown that Tl doping
decreases the electron concentration in n-Bi2 – xTlxSe3 and increases the electron mobility. In p-Sb2 – xTlxTe3,
both the hole concentration and mobility decrease upon Tl doping. The change in the crystal defect concentration,
which leads to these effects, is discussed.