Laser ablation doping of poly crystalline tin dioxide films with palladiumстатья
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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:Laser ablation of palladium was studied and velocity (energy) distributions of palladium ions evaporated by an Kr-F laser in a vacuum were obtained. The optimum values of energy fluence (fluence rate) of laser radiation for doping tin dioxide films, at which neither multiply charged PdN+ ions nor ionized clusters Pd N + , occur in a plasma, were determined. From time-of-flight probe measurement data, Pd+ implantation depths in SnO2 films were calculated, which qualitatively agree with the results obtained by secondary neutral mass spectrometry. Electric conductivity measurements on the obtained films in a gas phase showed that introduction of palladium into polycrystalline SnO2 films by laser ablation significantly enhanced their gas sensitivity to hydrogen.