Insulator-metal transition in diluted magnetic semiconductor Pb1-x-ySn xVyTe under pressureстатья

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[1] Insulator-metal transition in diluted magnetic semiconductor pb1-x-ysn xvyte under pressure / E. Skipetrov, A. Golovanov, B. Kovalev et al. // Solid State Phenomena. — 2012. — Vol. 190, no. 6. — P. 566–569. The galvanomagnetic properties in weak magnetic fields (4.2T300 K, B0.07 T) as well as Shubnikov-de Haas effect (T=4.2 K, B7 T) in the single crystal Pb1-x-ySnxVyTe (x=0.20, y0.01) under hydrostatic compression up to 15 kbar have been investigated. It is shown that under pressure the decrease of activation energy of vanadium deep level, n-p-inversion of the conductivity type at low temperatures and insulator-metal transition take place. In the metallic phase sharp increase of the Hall mobility and appearance of Shubnikov-de Haas oscillations at helium temperature are observed. The pressure coefficient of vanadium level energy is determined and the diagram of the electronic structure rearrangement for Pb1-x-ySnxVyTe under pressure is proposed. [ DOI ]

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