FAR-INFRARED HIGH-PERFORMANCE LEAD TELLURIDE-BASED PHOTODETECTORS FOR SPACE-BORN APPLICATIONSстатья
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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:A new class of far-infrared photodetectors based on lead-tin tellurides doped with group III impurities is presented. The persistent photoconductivity effect appearing in these materials provides an internal signal integration resulting in a considerable increase in signal-to-noise ratio. The techniques of the photomemory quenching are discussed. In some quenching regimes the effect of giant quantum efficiency stimulation has been observed. The possibility of the generation of photoinduced spatially non-equilibrium states provides the physical evidence for the construction of an integrating ''continuous'' focal-plane array based on Pb1-xSnxTe(In).