RELAXATION MECHANISMS OF ELECTRONIC EXCITATION IN NANOSTRUCTURES OF POROUS SILICONстатья
Информация о цитировании статьи получена из
Scopus,
Web of Science
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:The temperature dependence of porous silicon (PS) photoluminescence and the dependence of the contact potential difference (CPD) in the dark after illumination on the photon energy were investigated for as-anodized PS and for PS oxidized in air for various times after anodization and HF treatment. The effect of the temperature-induced red shift (with decreasing temperature) decreases with increasing HF treatment time and is discussed under the assumption of different lifetimes for radiative and non-radiative recombination. Various photon energy thresholds could be observed by CPD, indicating the role of charge carrier injection in the PS properties.