Mechanisms for the effect of adsorption of molecules on recombination processes in porous siliconстатья
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Аннотация:The effect of adsorption of H2O, O-2, C2H5ON, and C-2(CN)(4) molecules on the photoluminescence spectra and electronic paramagnetic resonance of porous silicon is investigated, The data obtained are explained in a model of radiative annihilation of excitons in silicon nanostructures which exhibit a size distribution. It is assumed that the nonradiative recombination occurs via defects at the surface of porous silicon. Three basic mechanisms are proposed for the effect of the adsorption of molecules on recombination processes in porous silicon: 1) photoinduced generation and annihilation reactions of surface defects (H2O and O-2); 2) change in the binding energy of excitons as a result of filling of pores with a dielectric medium (C2H5OH); and 3) destruction of excitons by the Coulomb fields of adsorbed complexes (C-2(CN)(4)). (C) 1996 American Institute of Physics.