Quantification of modifiers in advanced materials based on zinc oxide by total reflection X-ray fluorescence and inductively coupled plasma mass spectrometryстатья
Статья опубликована в высокорейтинговом журнале
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Дата последнего поиска статьи во внешних источниках: 10 мая 2016 г.
Аннотация:A novel approach to quantification of Ga and Zn modifiers in advanced materials based on zinc oxide is presented. The approach includes a combination of total reflection X-ray fluorescence (TXRF) and inductively coupled plasma mass spectrometry (ICP-MS) for determination and validation of the results. It is suggested to use aqueous standards for the direct determination of elements in powder samples by TXRF with a relative standard deviation no more than sr = 0.11. The accuracy of these results was proved by ICP-MS after the sample decomposition, sr(In) = 0.05, sr(Ga) = 0.06 and sr(Zn) = 0.06. It was established that there is a possibility to determine indium above 300 ppb on the background of K-M3 line of argon.