Photoacoustic spectroscopy of porous siliconстатья
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Аннотация:The results of a photoacoustic spectroscopy investigation of the optical absorption in porous-silicon films in the range 300-1500 nm are reported. It was found that the fundamental absorption edge due to the porous layer lies in the range 350-500 nm for the experimental samples. It was determined from the dependence of the photoacoustic signal on the light modulation frequency that the thermal conductivity of porous silicon is 0.25 x 10(-3) W/cm.deg. (C) 1997 American Institute of Physics.