Blocking effect of charge transfer at the porous silicon/silicon interfaceстатья
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Аннотация:The photoluminescence (PL) of a thin porous silicon (por-Si) layer and of bulk c-Si is investigated in situ after the formation in 0.2 M NH4F (pH 3.2) and in water, ethanol, and their vapors. The excitation light of the used pulsed N-2 laser is absorbed in the por-Si surface layer. This allows the contactless study of changes of the diffusion of excess carriers from the por-Si layer into the c-Si by using the PL of c-Si as a probe. The radiative recombination of c-Si decreases after exchanging the electrolyte by the other media while the PL intensity of the por-Si increases strongly. The strongest increase of the PL of por-Si is observed in ethanol atmosphere. The results are discussed on the basis of blocking of the out diffusion of excess carriers from the por-Si layer into the bulk c-Si due to electrical charging of interface states. (C) 1997 American Institute of Physics.