Time-resolved photoluminescence of erbium centers in amorphous hydrogenated siliconстатья
Статья опубликована в высокорейтинговом журнале
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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:A time-resolved photoluminescence (PL) technique is employed to study the mechanisms of excitation and deexcitation of Er3- ions in amorphous hydrogenated silicon (a-Si:H) at temperatures 5-300 K. The PL at 1.5 mum is found to arise within times shorter than a 100 ns after irradiation with a nanosecond laser pulse, indicating a fast energy transfer from the electronic excitation of a-Si:H to the Er3- ions. The PL transients exhibit a stretched exponential decay with mean lifetime ranging from 20 to 35 lis when the temperature decreases from 300 K down to 5 K. The experimental results support the model of defect-related excitation and de-excitation of the Er3- ions. (C) 2002 Elsevier Science B.V. All rights reserved.