Laser ultrasonic study of porous silicon layersстатья
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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:Propagation of ultrasonic signals induced by nanosecond laser pulses in porous silicon (por-Si) is considered from both the theoretical and the experimental viewpoints. The experimental samples are por-Si layers with 5- to 40-mum thickness and porosity of 50-75%; these layers were formed on a single-crystal silicon substrate by electrochemical etching. It is shown that the suggested ultrasonic laser method allows both the thickness and the porosity of a layer to be determined with the respective accuracies of no worse than 1 mum and 5%. (C) 2003 MAIK "Nauka/Interperiodica".