Laser-Induced Defect Formation and Phase Transition in III-V-Compoundsстатья
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Дата последнего поиска статьи во внешних источниках: 29 мая 2015 г.
Местоположение издательства:[Bristol, UK], England
Первая страница:790
Последняя страница:794
Аннотация:The laser-induced phase transitions in III-V-compounds were investigated by time resolved reflectivity, Raman scattering, and Rutherford back-scattering techniques. Our results show that intensive evaporation of the V-component from the laser melted crystal can initiate the solidification of the melt directly from the surface. This layer is polycrystalline with (110) primary orientation, and is rather defective. The defect concentration is maximal at the border where the recrystallization fronts moving from the surface and from the substrate meet.