INFRARED-SPECTROSCOPY AND PHOTOLUMINESCENCE PROPERTIES OF POROUS SILICON FILMS - EFFECT OF FORMING CONDITIONSстатья
Информация о цитировании статьи получена из
Web of Science
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 29 мая 2015 г.
Авторы:
BELOGOROKHOV AI,
KARAVANSKII VA,
BELOGOROKHOVA LI,
OBRAZTSOV AN
Аннотация:The intensity of the IR absorption in layers of porous silicon has been found to vary in a nonmonotonic way with the exposure time and the current density in the anodizing process when layers are formed on KDB-10 silicon single crystals in the (111) orientation. The values of the photoluminescence intensity correlate with the values of the optical density of the layers and with the IR absorption in the band at 628 cm(-1). On the other hand, the existence of bands of intense absorption involving hydrogen-silicon bonds is not a sufficient condition for the onset of photoluminescence in samples of porous silicon.