Diamond seed incorporation by electrochemical treatment of silicon substrateстатья
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Аннотация:Ultrafine diamond powders (UFD) were incorporated into Si substrates by electrochemical etching in a HF:C2H5OH:H2O solution containing UFD. Produced by this method, thin layers have shown optical and photoluminescence properties being typical for porous silicon. On the treated Si wafers a significant increase of the diamond nucleation density (compared with the substrates prepared by a common scratching method and anodized in electrolyte without UFD) has been reached. Another important advantage was a possibility to decrease significantly the substrate temperature (down to 500 degrees C) for CVD diamond deposition due to a low thermal conductivity of the porous silicon layer. (C) 1997 Elsevier Science S.A.