ИСТИНА

Quantum dots (QDs) are very promising for the construction of photodetectors, sollar cells, electroluminescent devices. While the II-VI materials, namely CdSe and CdS, have been studied extensively, synthetic limitations have precluded similar treatment of other materials, such as A3B5-system. InP is a promising material for the creation of fluorescent biotags and other eco-friendly materials because it is more stable than II-VI materials and does not contain toxic elements, such as Cd, Hg, or Se. We present the results of surface passivation of the InP QDs with Zn-myristate and ZnSe layer overgrown in different synthetic conditions. The first treatment lead to luminescence quantum yield (QY) up to 2.5%. The growth of ZnSe layer at high temperatures (up to 300oC) lead to QY about 10% if ZnSe precursors are put together while QY reach only 3% if precursors are added separately. Photoetching of synthesized InP/ZnSe-heterostructures was performed what let stable material with QY up to 30%. This work was supported by Russian Foundation for Basic Research Grant No. 12-03-00933A and Russian Presidential Grant No. MK-4778.2013.3. IR experiments were effectuated in the frame of Development Program at User Facilities Center of M.V. Lomonosov Moscow State University supported by Federal Contract 16.552.11.7081.