ИСТИНА

A setup with a small (~ 20 us) response times was designed and constructed, allowing to produce gaps of width < 5 nm in the Au films. Electromigration held on thin (15 nm) and narrow (200 nm) Au films and received nanoelectrodes with wide gaps ~ 5 nm suitable for the manufacture of single-molecular transistors based on them. Techniques of deposition of Au nanoparticles were demonstrated. Single-electron IV curve at room temperature were measured on such transistors. Magnetic nanoparticles also can be used as central island of such transistor.