ИСТИНА

Magnetic random access memory (MRAM) is considered now as a new generation of universal storage devices that combine the advantages of semiconductor random access memory (high performance) and permanent magnetic one (nonvolatility). However the problem of energy saving in such devices is not completely solved. In MRAM prototypes the writing of information implies usage of electric currents of high density 106-107А/cm2 that leads to considerable energy losses and device degradation due to overheating and electromigration. We propose another solution for the magnetic recording based on the effect of electric field induced micromagnetic structure transformation that was discovered in our group which does not imply large current density. There is an additional interaction that should be taken into account when we consider micromagnetic structure under influence of electric field or the structures in magnetic ferroelectrics (multiferroics). It is proportional to spatial derivatives of magnetic order parameter vector are electric and magnetic order parameters, respectively. In this report we will show by numerical simulation that the gradient of electric field produced by wire electrode might have strong influence on the micromagnetic structure of magnetic dielectric and can stabilize in magnetic dielectric nanoparticle either vortex or antivortex state depending on the electric polarity of the tip. It can be considered as a prototype of electrically switchable magnetic system with two logic states.