ИСТИНА

In present work we give a detailed analysis of the synthetic single-crystal boron-doped type IIb diamonds. Our analysis is based on the X-ray topography, X-ray diffractometry and optical spectroscopy data. We have grown single-crystal diamonds employing the HPHT technique when the amorphous boron was added to the carbon source as doping agent during the growth process. Based on a comparison of data obtained by Raman spectroscopy, IR absorption and mass spectrometry data, we have determined the individual concentrations of boron, contained in the positions of substitution, in the locations of defects and at low-angle boundaries. Boron concentrations in the substitution positions were determined by the ratio of the integral intensity of the electronic transition peak at 16 cm-1 to the integral intensity of the optical phonon at ~ 1330 cm-1