ИСТИНА

• Охват: Международная
• Даты проведения: 24-28 октября 2016
• Место проведения: Венеция, Italy
• Организатор:
  Excellence Cluster Universe
• Число участников: 150
• Число участников из МГУ: 3
• Число докладчиков: 70
• Веб-сайт: http://galaxylifecycle.wixsite.com/gal2016
• Описание конференции:

  The conference aim is to address the following questions from the observational point of view: Is there a compelling observational evidence of gas inflow onto galaxies? What is the current view on the galaxy gas content from neutral and molecular gas surveys? Is there a clear relation to the environment? What is the interplay between inflow and outflow to set the galaxy gas content and star formation activity? Which evidence for quenching are providing the main galaxy scaling relations, such as star forming galaxy Main Sequence, mass-metallicity relation, morphology-density relation? What can we infer about the evolution of the galaxy star formation activity? What are the main quenching mechanisms? What is the major physical link between morphology, environment, mass and star formation activity? The conference aim is to address the following questions from the theoretical point of view: What is the role of cold/hot accretion in sustaining/suppressing the SF activity during the structure formation process? What is the physics of the galaxy outflow and its effect on the galaxy gas content? How are disk instability and compactness driving the morphological evolution of galaxies and their level of star formation activity across cosmic time?

• Добавил в систему: Егоров Олег Владимирович

Доклады:

• 2016 Extended ionized gas discs in lenticular galaxies: imprints of external accretion. (Стендовый)
• Авторы: Olga Sil'chenko, Alexei Moiseev

• 2016 Gas kinematics of void galaxies: searching for evidences of gas accretion (Стендовый)
• Авторы: Egorova E., Moiseev A., Egorov O., Beckman J., Camps-Fariña A., Font J., Silchenko O.

• 2016 Gas metallicity in polar-ring galaxies: new measurements. (Стендовый)
• Авторы: Moiseev A.V., Egorov O.V.